Manufacturer: NanyaPart Number: NT512T64UH8B0FN-3CCapacity: 512MBPins:200Type: DDR2 SO-DIMMSupported Speed: 266MHz, 333MHz, and 400MHzAuto Refresh (CBR) and Self Refresh ModesAutomatic and controlled precharge commandsAddress and control signals are fully synchronous to positive clock edgeNT512T64UH8B0FN-3c are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of two ranks of 64x64 (512MB), high-speed memory array. Modules use four eight 32Mx16 (512MB) 84-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint. The DIMM is intended for use in applications operating of 333MHz clock speeds and achieves high-speed data transfer rates of 667MHz Prior to any access operation, the device CAS latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0 and BA1 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.